Device and Process Modeling

نویسنده

  • Siegfried Selberherr
چکیده

This contribution is intended to present highlights of the state of the art in numerical process and device modeling. Special emphasis will be put on three-dimensional simulation for submicron applications. As one particular example results for ion implantation into a three-dimensional trench are presented. The recent refinements to carrier transport models in semiconductor devices are discussed. As a particular example for three-dimensional device simulation the influence of the shape of the field-oxide in width direction is discussed. Some remarks on the computational requirements are given.

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تاریخ انتشار 2014